Dennemeyer Octimine

Semiconductor patents

Laura HorcajadaLaura Horcajada

Method of depositing films with narrow-band conductive properties

Conducting materials having narrow impurity conduction bands can reduce the number of high energy excitations, and can be prepared by a sequence of plasma treatments. For example, a dielectric layer can be exposed to a first plasma ambient to form vacancy sites, and the vacancy-formed dielectric layer can be subsequently exposed to a second plasma ambient to fill the vacancy sites with substitutional impurities.

Publication number: US2014175567A1 | Search similar patents

Optoelectronic devices utilizing materials having enhanced electronic transitions

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Publication number: EP1994565A2 | Search similar patents

Integrated semiconductor detector of particles and/or x-rays

1. A semiconductor detector for X-rays and corpuscular radiation comprising a scintillation body and a photo-diode having a blocking layer junction and electrodes, where the scintillation body (2) and the photo-diode are two portions of a single monolithic semiconductor body (2) consisting of a III-V-semiconductor material, where the semiconductor material having a direct junction of the portion forming the scintillation body (2), and the material of the portion forming the photo-diode (5) exhibit a considerably different absorption behaviour towards the photons (4) which are produced by the radiation (5) to be detected, characterised in that the material of the portion forming the scintillation body (2) is a semiconductor material whose quantum energy of radiating junctions corresponds to the energy gap between a low-energy branch of the conduction band and a high-energy branch of the valence band.

Publication number: EP0058230A1 | Search similar patents

Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures

A new class of synthesized semiconducting multiple layer materials, structures, and devices and apparatus and methods for synthesizing the structures. At least one layer (138a) of the multiple layer structure (138) is a disordered semiconductor material. Multiple layer structures can form one or more regions of improved photoresponsive and photovoltaic single and tandem cells, thin film transistors and thermoelectric devices. The multiple layer structures provide a means of electronically doping semiconductor device structures without adding substitutional dopant impurities.

Publication number: EP0145403A3 | Search similar patents

Fully integrated thermoelectric devices and their application to aerospace de-icing systems

A thermoelectric module and methods for making and applying same provide an integrated, layered structure comprising first and second, thermally conductive, surface volumes, each in thermal communication with a separate respective first and second electrically conductive patterned trace layers, and an array of n-type and p-type semiconducting elements embedded in amorphous silica dielectric and electrically connected between the first and second patterned trace layers forming a thermoelectric circuit.

Publication number: WO2013033654A1 | Search similar patents

Low resistance tunnel junctions in wide band gap materials and method of making same

A low resistance tunnel junction that uses a natural polarization dipole associated with dissimilar materials to align a conduction band to a valence band is disclosed. Aligning the conduction band to the valence band of the junction encourages tunneling across the junction. The tunneling is encouraged, because the dipole space charge bends the energy bands, and shortens a tunnel junction width charge carriers must traverse to tunnel across the junction. Placing impurities within or near the tunnel junction that may form deep states in the junction may also encourage tunneling in a tunnel junction. These states shorten the distance charge carriers must traverse across the tunnel junction.

Publication number: US2007194300A1 | Search similar patents

Extrinsic infrared detector with dopant site charge-neutralization

A relatively thin layer of extrinsic material formed on the top surface of a nearly intrinsic semiconductor substrate forms the detector area of an infrared detector device. A source region is provided along a portion of the perimeter of the detector area and is electrically coupled to the extrinsic detector area by means of an external connection. A drain channel is provided which is separated from the detector area by a gate region. The concentration of the extrinsic material in the detector area is sufficient for it to be at least a poor conductor. Thus, replacement electrons can flow from the source region into the extrinsic detector area via the external connection and electrical charge-neutrality can thereby be maintained at the extrinsic sites. The gate electrode forms a fringing field extending into the detector area which facilitates conduction from the detector area to the drain channel during the read-out process. An X-Y addressable array of such detectors can be readily fabricated using silicon MOS technology.

Publication number: US4433343A | Search similar patents

Intermediate band semiconductor photovoltaic solar cell

The invention relates to a solar cell containing a semiconductor (1) with an intermediate band (2) that is half filled with electrons, located between two layers of ordinary n type (3) and p type (4) semiconductors. When lighted, electron-hole pairs are formed either by a photon that absorbs the necessary energy (5) or by two photons (6,7) that absorb less energy which pump an electron from the valence band to the intermediate band (8) and from the latter to the conductance band (9). An electrical current is generated that exits on the p side and returns via the n side. The n and p layers also prevent the intermediate band from contacting the outer metal connections, which would have resulted in a short-circuit. Said cell converts solar energy into electricity in a more efficient manner than conventional cells and contributes to improvement of the photovoltaic devices.

Publication number: EP1130657A2 | Search similar patents

Amorphous semiconductors equivalent to crystalline semiconductors

A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film, preferably by vaporizing silicon or the like in an evacuated space and condensing the same on a substrate in such space, and preferably at the same time, introducing at least two or three compensating or altering agents into the film, like activated hydrogen and fluorine, in amounts which substantially reduce or eliminate the localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell applications is obtained and dopants can be effectively added to produce p or n amorphous semiconductor films so that the films function like similar crystalline materials.

Publication number: WO7900724A1 | Search similar patents

Light-emitting device, light-receiving device and method of manufacturing the same

An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

Publication number: WO2010055750A1 | Search similar patents

Polarized radiation source using spin extraction/injection

Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an interface under forward bias voltage conditions. Due to spin-selection property of the FM-S junction, spin-polarized carriers appear in the n-doped semiconductor layer near the FM-S interface. If a FM-n-n′-p heterostructure is formed, where the n′ region is a narrower gap semiconductor, polarized electrons from the n-S region and holes from the p-S region can diffuse into the n′-S region under the influence of independent voltages applied between the FM and n′ regions and the n′ and p regions. The polarized electrons and holes recombine in the n′-S region and produce polarized light. The polarization can be controlled and modulated by controlling the applied voltages.

Publication number: US2006186432A1 | Search similar patents

Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof

A three-dimensional polycrystalline semiconductor material provides a major ingredient forming individual crystalline grains having a nominal maximum grain diameter less than or equal to 50 nm, and a minor ingredient forming boundaries between the individual crystalline grains.

Publication number: US2012104358A1 | Search similar patents

Up and down conversion using quantum dot arrays

A luminance converter comprises layers of organised, crystalline semiconductor material quantum dots which are formed within the respective layers with size and location determined by parameters of said layer. Quantum dot energy gaps are determined by selecting matrix and quantum dot parameters. The layers of quantum dots are positioned adjacent to each other, and adjacent layers have different quantum dots having different energy gaps. The energy gap of quantum dots in one of the layers of quantum dots will have a differential energy equal to the target energy of output photons of the luminance converter and the energy gap of quantum dots in another of the layers will have differential energy less than or equal to a minimum target energy of input photons of the luminance converter. The quantum dots in adjacent layers are sufficiently closely spaced to allow migration of electrons between energy states either through photon excitation to a higher energy state or relaxation to a lower energy state.

Publication number: WO2008046147A1 | Search similar patents

Semiconductor device with tunable energy band gap

The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

Publication number: EP1807913A1 | Search similar patents

Method and apparatus for x-ray imaging

An X-ray detector (401, 501, 601) has a detecting element that comprises a semiconductor heterostructure where an undoped Germanium layer (402, 502) is enclosed between two oppositely doped Gallium Arsenide layers (403, 404, 503, 505).

Publication number: EP1376105A2 | Search similar patents

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