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2d material patents

Laura HorcajadaLaura Horcajada

Systems and Methods for Implementing Select Devices Constructed from 2D Materials

Systems and methods in accordance with embodiments of the invention implement select devices constructed from 2D materials. In one embodiment, a crossbar memory system includes: a first set of connection lines; a second set of connection lines; and an array of memory cells, each memory cell including: a select device; and a memory device; where each memory cell is coupled to a unique combination of: at least one connection line from the first set of connection lines, and at least one connection line from the second set of connection lines; and where at least one select device includes a 2D material.

Publication number: US2016204162A1 | Search similar patents

Method of establishing configuration of ligand molecule and apparatus therefor

A method of, on the basis of three-dimensional structural information of biopolymer, establishing the configuration of a ligand molecule binding to the biopolymer; and an apparatus therefor. There is provided a method of establishing the configuration of a ligand molecule binding to biopolymer, comprising disposing a virtual atom in a ligand binding region of biopolymer; computing the van der Waals potential between the biopolymer and the virtual atom; and from the van der Waals potential, removing any unstable portion of the van der Waals potential in which the virtual atom is positioned. Further, there is provided an apparatus for the method.

Publication number: WO2005103994A1 | Search similar patents

Electrodes for optoelectronic components and the use thereof

The invention relates to electrodes, which comprise spherical allotropes, particularly silicon and/or carbon nanotubes, and to the use thereof in organic semiconductor technology. The electrodes can either exclusively contain allotropes and/or contain allotropes that are embedded in an organic functional polymer.

Publication number: EP1512184A2 | Search similar patents

Two dimensional layered material quantum well junction devices

A quantum well device includes a first layer of a first two-dimensional material, a second layer of a second two-dimensional material, and a third layer of a third two-dimensional material disposed between the first layer and second layer. The first layer, the second layer, and the third layer are adhered predominantly by van der Waals force.

Publication number: WO2016032680A1 | Search similar patents

Frequent sequence enumeration device, method, and recording medium


In order to efficiently carry out a frequency calculation process, a frequent sequence enumeration device comprises: a suffix array storage unit which, when all suffixes for sequence data are arranged in dictionary order, stores a suffix array whereby it is possible to reference a location on the sequence data from a location on a dictionary; a suffix array frequency calculation unit which, taking a set of locations on the suffix array as input, counts the number of times a character is included in the suffixes referenced by the suffix array, using the fact that the suffixes are sequenced; and a suffix array mapping unit which, taking a set of locations in the suffix array and a specified character as input, returns an appearance location on the suffix array with respect to the inputted character by adding one to the value within the suffix array and referencing an inverted array of the suffix array.

Publication number: WO2015025751A1 | Search similar patents

Soft material wafer bonding and method of bonding

A semiconductor device including a first wafer assembly having a first substrate and a first oxide layer over the first substrate. The semiconductor device further includes a second wafer assembly having a second substrate and a second oxide layer over the second substrate. The first oxide layer and the second oxide layer are bonded together by van der Waals bonds or covalent bonds. A method of bonding a first wafer assembly and a second wafer assembly including forming a first oxide layer over a first substrate. The method further includes forming a second oxide layer over a second wafer assembly. The method further includes forming van der Waals bonds or covalent bonds between the first oxide layer and the second oxide layer.

Publication number: US2013207098A1 | Search similar patents

Wafer-to-wafer oxide fusion bonding

Oxide-oxide fusion bonding of wafers that includes performing a van der Waals force bonding process with a chuck having at least a flat central zone and an outer annular zone lower than the central zone, an edge portion of a mounted wafer is biased towards the outer annular zone. The van der Waals bonding wave is disrupted at the outer annular zone, causing an edge gap. A thermocompression bonding process is performed that includes heating the bonded wafers to a temperature sufficient to initiate condensation of silanol groups between the bonding surfaces, reducing the atmospheric pressure to cause degassing from between the wafers, applying a compression force to the wafers with flat chucks so as to substantially eliminate the edge gap, and performing a permanent anneal bonding process.

Publication number: US2014261960A1 | Search similar patents

Conveyor device with improved adhesive properties

The invention relates to a conveyor device comprising a conveyor belt (10) with a surface (4) oriented towards the outer face of the conveyor belt. The surface (4) has a plurality of microstructures with protruding regions such that an object (14) adheres to the surface (4) when the object (14) comes into contact with the surface (4) on the basis of the resulting van der Waals forces.

Publication number: WO2013164391A1 | Search similar patents

Bulk monolithic nano-heterostructures and method of making the same

A new Enhanced High Pressure Sintering (EHPS) method for making three-dimensional fully dense nanostructures and nano-heterostructures formed from nanoparticle powders, and three-dimensional fully dense nanostructures and nano-heterostructures formed using that method. A nanoparticle powder is placed into a reaction chamber and is treated at an elevated temperature under a gas flow to produce a cleaned powder. The cleaned powder is formed into a low density green compact which is then sintered at a temperature below conventional sintering temperatures to produce a fully dense bulk material having a retained nanostructure or nano-heterostructure corresponding to the nanostructure of the constituent nanoparticles. All steps are performed without exposing the nanoparticle powder to the ambient.

Publication number: US2015147590A1 | Search similar patents

Bonding wire including a wire rod coated with a carbon allotrope

According to the present invention, a bonding wire comprises: a wire rod made of copper, a copper alloy, copper plated with a dissimilar metal, or a copper alloy plated with a dissimilar metal; and at least one coating layer obtained by coating the wire rod with one species selected from the group consisting of graphene, diamond, diamond-like carbon (DLC), and carbon nanotubes.

Publication number: WO2013032175A2 | Search similar patents

Pressure sensor and method for producing the pressure sensor


The invention relates to a pressure sensor (100) having a substrate (102) and a transistor structure (104). The substrate (102) has a cavity (106) made in the substrate (102). The transistor structure (104) is arranged above the cavity (106). The transistor structure (104) has a flexible heterostructure (108) and at least one source contact (110) and drain contact (112) and gate contact (114) each connected to the heterostructure (108) in an electrically conductive manner. The heterostructure (108) is designed to assume a position corresponding to a pressure ratio between a first pressure in the cavity (106) and a second pressure on a side of the heterostructure (108) opposite the cavity. The transistor structure (104) is designed to provide an electrical signal corresponding to the position.

Publication number: WO2015135691A1 | Search similar patents

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